Description
We consider a semiconducting device with an active zone made of a single-layer material. The associated Poisson equation for the electrostatic potential (to be solved in order to perform self-consistent computations) is characterized by a surface particle density and an out-of-plane dielectric permittivity in the region surrounding the single-layer. To avoid mesh refinements in such a region, we propose an interface problem based on the natural domain decomposition suggested by the physical device. Two different interface continuity conditions are discussed. Then, we present the corresponding variational formulations adapting the so called three-fields formulation for domain decomposition and the proper finite element method for their approximation. Finally, numerical experiments are shown to illustrate some specific features of this interface approach.
Co-author: Clement Jourdana, Univ. Grenoble Alpes, CNRS, Grenoble INP, LJK, Grenoble, France
