Speaker
Tuan Tung Nguyen
(TU Wien)
Description
The memristor is a novel semiconductor device equipped with a memory due to the change of its electrical resistance. In this way, it may mimic the behavior of a synapse in the human brain. The memristor is modeled by drift-diffusion equations which describe the transport of the electron, hole, and oxygen vacancy densities. We prove the existence of global weak solutions in the presence of recombination-generation effects. Moreover, we establish time-uniform positive upper and lower bounds away from zero for the charge carrier densities and investigate the exponential stability towards stationary solutions. This is work in progress with Ansgar Jüngel.